View IRLU8743PBF_4121729.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD - 96123
IRLR8743PbF IRLU8743PBF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current
l
HEXFET(R) Power MOSFET
VDSS
30V
RDS(on) max
3.1m:
D
Qg
39nC
S G
S D G
D-Pak I-Pak IRLR8743PbF IRLU8743PBF
G Gate D Drain S Source
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C PD @TC = 100C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
30 20 160f 113f 640 135 68 0.90 -55 to + 175 300 (1.6mm from case)
Units
V
g Maximum Power Dissipation g
Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
A W W/C C
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RJC RJA RJA Junction-to-Case Junction-to-Ambient (PCB Mount) Junction-to-Ambient
Typ.
Max.
1.11 50 110
Units
C/W
gA
--- --- ---
Notes through are on page 11
www.irf.com
1
08/15/07
IRLR/U8743PbF
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter EAS IAR EAR Single Pulse Avalanche Energyd Avalanche CurrentA Repetitive Avalanche Energy
Min. Typ. Max. Units
30 --- --- --- 1.35 --- --- --- --- --- 89 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 20 2.4 3.0 1.9 -6.4 --- --- --- --- --- 39 10 3.9 13 12 17 21 0.85 19 35 21 17 4880 950 470 --- --- 3.1 V
Conditions
VGS = 0V, ID = 250A
mV/C Reference to 25C, ID = 1mA VGS = 10V, ID = 25A m 3.9 VGS = 4.5V, ID = 20A 2.35 V VDS = VGS, ID = 100A
e e
--- 1.0 150 100 -100 --- 59 --- --- --- --- --- --- 1.5 --- --- --- --- --- --- --- Typ. --- --- ---
mV/C A nA S VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 15V, ID = 20A VDS = 15V nC VGS = 4.5V ID = 20A See Fig. 16 nC ns VDD = 15V, VGS = 4.5Ve ID = 20A VDS = 16V, VGS = 0V
RG = 1.8 See Fig. 14
VGS = 0V VDS = 15V = 1.0MHz Max. 250 20 13.5 Units mJ A mJ
pF
Avalanche Characteristics
--- --- --- --- --- --- --- --- 18 32
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
160f A 640 1.0 27 48 V ns nC
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 20A, VGS = 0V TJ = 25C, IF = 20A, VDD = 15V di/dt = 300A/s
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
www.irf.com
IRLR/U8743PbF
1000
TOP VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V 2.5V
1000
TOP VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V 2.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10 2.5V
1 2.5V
60s PULSE WIDTH
0.1 0.1 1 Tj = 25C 1 100 0.1 1 10
60s PULSE WIDTH
Tj = 175C 10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance (Normalized)
2.0 ID = 25A VGS = 10V 1.5
ID, Drain-to-Source Current (A)
100
10
T J = 175C
1
T J = 25C VDS = 15V 60s PULSE WIDTH
1.0
0.1 0 2 4 6 8
0.5 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Junction Temperature (C)
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
www.irf.com
3
IRLR/U8743PbF
100000
5.0
VGS, Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
ID= 20A 4.0
VDS= 24V VDS= 15V
C, Capacitance (pF)
10000 Ciss
3.0
2.0
1000
Coss Crss
1.0
100 1 10 VDS, Drain-to-Source Voltage (V) 100
0.0 0 5 10 15 20 25 30 35 40 45 50 QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
1000
10000
OPERATION IN THIS AREA LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
T J = 175C
1000 100sec 100 1msec 10msec 10
T J = 25C 10
1 VGS = 0V 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VSD, Source-to-Drain Voltage (V)
1
Tc = 25C Tj = 175C Single Pulse 0 1 10 100
0.1 VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
www.irf.com
IRLR/U8743PbF
180
VGS(th) , Gate Threshold Voltage (V)
2.5
160 140
Limited By Package
2.0
ID, Drain Current (A)
120 100 80 60 40 20 0 25 50 75 100 125 150 175 T C , Case Temperature (C)
1.5
ID = 100A
1.0
0.5 -75 -50 -25 0 25 50 75 100 125 150 175 200 T J , Temperature ( C )
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10. Threshold Voltage vs. Temperature
10
Thermal Response ( Z thJC ) C/W
1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 0.0001 0.001
J J 1 R1 R1 2 R2 R2 R3 R3 3 R4 R4 C 1 2 3 4 4
Ri (C/W)
0.02879
i (sec)
0.000017 0.000143 0.001411
0.25773 0.48255
0.01
Ci= i/Ri Ci i/Ri
0.34135 0.010617 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.001 1E-006
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRLR/U8743PbF
15V
1200
EAS , Single Pulse Avalanche Energy (mJ)
VDS
L
DRIVER
1000 800 600 400 200 0 25 50 75 100
ID 2.7A 3.7A BOTTOM 20A TOP
RG
20V VGS
D.U.T
IAS tp
+ V - DD
A
0.01
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp
125
150
175
Starting T J , Junction Temperature (C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
RD
Fig 12b. Unclamped Inductive Waveforms
V GS RG
Current Regulator Same Type as D.U.T.
V DS
D.U.T.
+
-V DD
VGS
Pulse Width 1 s Duty Factor 0.1 %
50K 12V .2F .3F
Fig 14a. Switching Time Test Circuit
D.U.T. + V - DS
VDS 90%
VGS
3mA
IG
ID
Current Sampling Resistors
10% VGS
td(on) tr t d(off) tf
Fig 13. Gate Charge Test Circuit
Fig 14b. Switching Time Waveforms
6
www.irf.com
IRLR/U8743PbF
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
V DD
VDD
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
Id Vds Vgs
Vgs(th)
Qgodr
Qgd
Qgs2 Qgs1
Fig 16. Gate Charge Waveform
www.irf.com
7
IRLR/U8743PbF
Power MOSFET Selection for Non-Isolated DC/DC Converters
Control FET Special attention has been given to the power losses in the switching elements of the circuit - Q1 and Q2. Power losses in the high side switch Q1, also called the Control FET, are impacted by the Rds(on) of the MOSFET, but these conduction losses are only about one half of the total losses. Power losses in the control switch Q1 are given by; Synchronous FET The power loss equation for Q2 is approximated by;
* Ploss = Pconduction + P + Poutput drive
Ploss = Irms x Rds(on)
+ ( g x Vg x f ) Q
(
2
)
Ploss = Pconduction+ Pswitching+ Pdrive+ Poutput
This can be expanded and approximated by;
Q + oss x Vin x f + (Qrr x Vin x f ) 2
*dissipated primarily in Q1.
Ploss = (Irms 2 x Rds(on ) ) Qgd +I x x Vin x ig + (Qg x Vg x f ) + Qoss x Vin x f 2 Qgs 2 f + I x x Vin x f ig
This simplified loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen from Fig 16. Qgs2 indicates the charge that must be supplied by the gate driver between the time that the threshold voltage has been reached and the time the drain current rises to Idmax at which time the drain voltage begins to change. Minimizing Q gs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the output capacitance of the MOSFET during every switching cycle. Figure A shows how Qoss is formed by the parallel combination of the voltage dependant (nonlinear) capacitances Cds and Cdg when multiplied by the power supply input buss voltage.
For the synchronous MOSFET Q2, Rds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off by the control IC so the gate drive losses become much more significant. Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs' susceptibility to Cdv/dt turn on. The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of Q2 and can induce a voltage spike on the gate that is sufficient to turn the MOSFET on, resulting in shoot-through current . The ratio of Qgd/Qgs1 must be minimized to reduce the potential for Cdv/dt turn on.
Figure A: Qoss Characteristic
8
www.irf.com
IRLR/U8743PbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
@Y6HQG@) UCDTADTA6IADSAS XDUCA6TT@H7G GPUA8P9@A !"# %A! ! Q6SUAIVH7@S DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G@9APIAXXA
DIAUC@A6TT@H7GAGDI@AA6A
,5)5 $
96U@A8P9@ @6SA X@@FA GDI@A6 A2A! %
Ir)AAQAAvAhriyAyvrAvv vqvphrAAGrhqArrA
6TT@H7G GPUA8P9@
AQAAvAhriyAyvrAvvAvqvphr AGrhqArrAAhyvsvphvAAurApryrry
25
Q6SUAIVH7@S DIU@SI6UDPI6G S@8UDAD@S GPBP 96U@A8P9@ QA2A9@TDBI6U@TAG@69AS@@ QSP9V8UAPQUDPI6G QA2A9@TDBI6U@TAG@69AS@@ QSP9V8UARV6GDAD@9AUPAUC@ 8PITVH@SAG@W@GAPQUDPI6G @6SA X@@FA A2A! %
,5)5
6TT@H7G GPUA8P9@
6A2A6TT@H7GATDU@A8P9@
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
9
IRLR/U8743PbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
@Y6HQG@) UCDTADTA6IADSAV ! XDUCA6TT@H7G GPUA8P9@A$%&' 6TT@H7G@9APIAXXA (A! DIAUC@A6TT@H7GAGDI@AA6A Ir)AAQAAvAhriyAyvrAvv vqvphrAGrhqArrA DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@ Q6SUAIVH7@S
,5)8 $
96U@A8P9@ @6SA A2A! X@@FA ( GDI@A6
25
DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@ Q6SUAIVH7@S
,5)8
96U@A8P9@ QA2A9@TDBI6U@TAG@69AS@@ QSP9V8UAPQUDPI6G @6SA A2A! X@@FA ( 6A2A6TT@H7GATDU@A8P9@
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
www.irf.com
IRLR/U8743PbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR TRR TRL
16.3 ( .641 ) 15.7 ( .619 )
16.3 ( .641 ) 15.7 ( .619 )
12.1 ( .476 ) 11.9 ( .469 )
FEED DIRECTION
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Notes: Repetitive rating; pulse width limited by Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 50A.
max. junction temperature. Starting TJ = 25C, L = 1.252mH, RG = 25, IAS = 20A. Pulse width 400s; duty cycle 2%.
When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/2007
www.irf.com
11

▲Up To Search▲

Price & Availability of IRLU8743PBF

	To Download IRLU8743PBF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .